Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV19.62€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | SMPD-B |
Max. off-state voltage: | 1.2kV |
Semiconductor structure: | diode/transistor |
Gate-emitter voltage: | ±20V |
Collector current: | 30A |
Pulsed collector current: | 75A |
Power dissipation: | 150W |
Electrical mounting: | SMT |
Type of module: | IGBT |
Technology: | ISOPLUS™ |
Technology: | Sonic FRD™ |
Topology: | IGBT half-bridge |
Vienības svars: | 0.007 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 5 93.86 € -+ |