Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO26812.86€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | TO268 |
Technology: | BiMOSFET™ |
Kind of package: | tube |
Mounting: | SMD |
Features of semiconductor devices: | high voltage |
Collector-emitter voltage: | 1.7kV |
Gate-emitter voltage: | ±20V |
Collector current: | 10A |
Pulsed collector current: | 40A |
Turn-on time: | 63ns |
Turn-off time: | 1.8µs |
Type of transistor: | IGBT |
Power dissipation: | 140W |
Gate charge: | 30nC |
Vienības svars: | 0.004 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 3 215.17 € -+ |