Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV105.68€/ gab.Цена в том числе НДС 21%
|
Manufacturer: | IXYS |
Case: | TO247HV |
Kind of package: | tube |
Technology: | BiMOSFET™ |
Features of semiconductor devices: | high voltage |
Mounting: | THT |
Power dissipation: | 180W |
Gate charge: | 46nC |
Collector-emitter voltage: | 3kV |
Gate-emitter voltage: | ±20V |
Collector current: | 10A |
Pulsed collector current: | 88A |
Turn-on time: | 805ns |
Turn-off time: | 2.13µs |
Type of transistor: | IGBT |
Вес единицы: | 0.006 кг |
---|---|
Минимальный заказ: | 1 |