 | Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max41.25€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | MICROCHIP (MICROSEMI) |
| Collector-emitter voltage: | 1.2kV |
| Gate-emitter voltage: | ±30V |
| Collector current: | 54A |
| Pulsed collector current: | 170A |
| Turn-on time: | 47ns |
| Turn-off time: | 230ns |
| Type of transistor: | IGBT |
| Power dissipation: | 625W |
| Kind of package: | tube |
| Features of semiconductor devices: | integrated anti-parallel diode |
| Gate charge: | 185nC |
| Technology: | POWER MOS 7® |
| Technology: | PT |
| Mounting: | THT |
| Case: | T-Max |
Параметры
| Вес единицы: | 0.006 кг |
|---|---|
| Минимальный заказ: | 1 |
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