GeneSiC SEMICONDUCTOR

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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207WG3R75MT12K52917.96-+
Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tubeGC02MPS12-220184.90-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75WG3R350MT12J9607.17-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333WG3R40MT12D113322.01-+
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7G2R1000MT17J9458.21-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123WG3R160MT12D92510.85-+
Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tubeGC2X15MPS12-2472118.23-+
Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tubeGC2X5MPS12-247288.99-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74WG3R350MT12D4577.49-+
Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tubeGD10MPS17H218.76-+
Diode: Schottky rectifying; SiC; SMD; 650V; 30A; TO263-7; tubeGD30MPS06J909.38-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542WG3R20MT12K60146.59-+
Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tubeGC2X8MPS12-247911.81-+
Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300AG3R20MT17N2166.45-+
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438WG3R45MT17D1861.90-+
Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tubeGD30MPS06H1649.23-+
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438WG3R45MT17K37442.35-+
Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screwGD2X30MPS06N941.85-+
Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240AG3R20MT12N15364.90-+
Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tubeGE06MPS06A163.67-+
Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tubeGC2X10MPS12-2471314.85-+
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88WG3R450MT17D5509.11-+
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333WG3R40MT12K32731.25-+
Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screwGD2X100MPS06N8458.54-+
Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tubeGD15MPS17H51918.88-+
Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tubeGD05MPS17H1277.81-+
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91WG3R450MT17J84411.49-+
Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tubeGE2X8MPS06D607.88-+
Lapas: «12»
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