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Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3IXXH60N65B4H11016.84-+
Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4CPC1303GRTR9972.78-+
Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4CPC1303GR3591.98-+
Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μsCPC1302GSTR7594.90-+
Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8CPC1302G3933.09-+
Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268IXFT150N30X3HV3029.08-+
Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100AIXFN44N80P2045.92-+
Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370AGUO40-16NO19729.36-+
Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550AIXFN210N30P3169.88-+
Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tubeDSSK50-015A607.14-+
Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3IXYP20N65C3D11565.06-+
Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3IXXH40N65B41577.46-+
Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240AIXFN120N65X2174.00-+
Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VACCPC1008N13663.92-+
Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500AIXFN180N25T332.28-+
Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247ADIXXH30N60B3D112410.58-+
Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264IXFK300N20X31145.79-+
Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70nsIXTP76P10T607.51-+
Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tubeCS30-16IO12937.37-+
Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220ABIXFP12N65X22704.50-+
Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255ADSI30-16AS-TUB154.54-+
Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215WDPG80C400HB66.82-+
Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3PIXTQ170N10P114.05-+
Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263IXYA15N65C3D12604.50-+
Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04VCLA110MB1200NA9634.23-+
Bridge rectifier: single-phase; Urmax: 1.2kV; If: 18A; Ifsm: 550AVBO36-12NO83217.12-+
Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100nsIXTP80N10T3004.99-+
Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160WDSI30-16A3003.63-+
Lapas: «67891011 .. 44»
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