SEMIKRON DANFOSS

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Lapas: «123456»
ProduktsKodsCena
Diode: rectifying; 400V; 1.5V; 72A; cathode to stud; DO203AB,E11SKR71/04289.64-+
Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4SKM300GA12V12245.21-+
Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 300A; SEMITRANS4SKM300GA12T413152.46-+
Diode: rectifying; 1200V; 1.55V; 25A; anode to stud; DO203AA,E8; M6SKN26/12489.24-+
Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screwSKM400GAL125D10350.66-+
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 241ASKM200GB12T429191.85-+
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150ASKM195GB126D37172.79-+
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200ASKM195GB066D71103.55-+
Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screwSKM150GAR12T45595.57-+
Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screwSKM150GAL12T427126.18-+
Diode: rectifying; 400V; 1.5V; 72A; anode to stud; E12; M8; Ifsm: 1kASKN70/041716.28-+
Diode: rectifying; 1600V; 1.5V; 72A; anode to stud; E12; M8SKN70/164719.62-+
Module: thyristor; double series; 1.6kV; 119A; SEMIPACK1; screwSKKT107B16E6440.20-+
Diode: rectifying; 400V; 1.5V; 72A; anode to stud; DO203AB,E11; M8SKN71/04311.69-+
Diode: rectifying; 400V; 1.5V; 130A; cathode to stud; DO205AC,E14SKR130/041627.00-+
Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 775A; SEMITRANS4SKM600GA17E415341.76-+
Bridge rectifier: single-phase; Urmax: 800V; If: 9A; Ifsm: 200ABI6-081428.39-+
Module: thyristor; double series; 1.6kV; 122A; A21; SEMIPACK2SKKT122/16E1068.95-+
Module: thyristor; opposing; 1.2kV; 33A; T1; SEMITOP1; Ufmax: 1.9VSK45KQ121225.19-+
Diode: rectifying; 1600V; 1.55V; 25A; anode to stud; DO203AA,E8; M6SKN26/163410.34-+
Diode: rectifying; 1800V; 1.55V; 100A; anode to stud; DO205AC,E13SKN100/18644.72-+
Diode: rectifying; THT; 1600V; 3A; Ifsm: 150A; E34 (D6x9); SK3SK3/1611871.57-+
Diode: rectifying; 1800V; 1.55V; 100A; cathode to stud; M12SKR100/18135.67-+
Bridge rectifier: three-phase; Urmax: 1.2kV; If: 55A; Ifsm: 200ASK55D122723.66-+
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 176ASKM150GB12V1215.99-+
Module: diode-thyristor; 1.6kV; 55A; A47; SEMIPACK1; Ufmax: 1.65VSKKH57/16E4736.07-+
Diode: rectifying; 1200V; 1.25V; 5A; anode to stud; E6 (112D18M4)SKN5/123515.31-+
Module: thyristor; double series; 1.6kV; 420A; A73b; SEMIPACK3SKKT250/16E25245.21-+
Lapas: «123456»
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