Transistor: IGBT; 1.2kV; 40A; 277W; TO247-313.15€/ gab.Цена в том числе НДС 21%
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Manufacturer: | ONSEMI |
Case: | TO247-3 |
Kind of package: | tube |
Power dissipation: | 277W |
Features of semiconductor devices: | integrated anti-parallel diode |
Gate charge: | 0.37µC |
Mounting: | THT |
Collector-emitter voltage: | 1.2kV |
Gate-emitter voltage: | ±25V |
Collector current: | 40A |
Pulsed collector current: | 160A |
Type of transistor: | IGBT |
Вес единицы: | 0.004 кг |
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Минимальный заказ: | 1 |