Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO26485.72€/ gab.Цена в том числе НДС 21%
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Manufacturer: | IXYS |
Case: | TO264 |
Mounting: | THT |
Collector-emitter voltage: | 1.7kV |
Gate-emitter voltage: | ±20V |
Collector current: | 75A |
Pulsed collector current: | 580A |
Turn-on time: | 277ns |
Turn-off time: | 840ns |
Type of transistor: | IGBT |
Power dissipation: | 1.04kW |
Kind of package: | tube |
Features of semiconductor devices: | high voltage |
Gate charge: | 0.35µC |
Technology: | BiMOSFET™ |
Вес единицы: | 0.009 кг |
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Минимальный заказ: | 1 |