Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max109.24€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Mounting: | THT |
Collector-emitter voltage: | 1.2kV |
Gate-emitter voltage: | ±30V |
Collector current: | 46A |
Pulsed collector current: | 140A |
Turn-on time: | 36ns |
Turn-off time: | 0.22µs |
Type of transistor: | IGBT |
Power dissipation: | 543W |
Kind of package: | tube |
Features of semiconductor devices: | integrated anti-parallel diode |
Gate charge: | 150nC |
Technology: | POWER MOS 7® |
Technology: | PT |
Case: | T-Max |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 1 160.00 € -+ |