 | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A17.55€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | Qorvo (UnitedSiC) |
| Technology: | SiC |
| Mounting: | SMD |
| Power dissipation: | 115W |
| Features of semiconductor devices: | ESD protected gate |
| Case: | D2PAK |
| Drain-source voltage: | 650V |
| Drain current: | 18.2A |
| On-state resistance: | 80mΩ |
| Type of transistor: | N-JFET/N-MOSFET |
| Polarisation: | unipolar |
| Gate charge: | 51nC |
| Kind of transistor: | cascode |
| Gate-source voltage: | ±25V |
| Pulsed drain current: | 65A |
Параметры
| Вес единицы: | 0.001 кг |
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| Минимальный заказ: | 1 |
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