Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A16.82€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | Qorvo (UnitedSiC) |
Technology: | SiC |
Mounting: | THT |
Power dissipation: | 190W |
Features of semiconductor devices: | ESD protected gate |
Case: | TO220-3 |
Polarisation: | unipolar |
Gate charge: | 51nC |
Kind of transistor: | cascode |
Gate-source voltage: | ±25V |
Pulsed drain current: | 65A |
Drain-source voltage: | 650V |
Drain current: | 23A |
On-state resistance: | 80mΩ |
Type of transistor: | N-JFET/N-MOSFET |
Vienības svars: | 0.002 kg |
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Minimālais pasūtījums: | 1 |