Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A51.51€/ gab.Цена в том числе НДС 21%
|
Manufacturer: | Qorvo (UnitedSiC) |
Mounting: | THT |
Power dissipation: | 326W |
Polarisation: | unipolar |
Features of semiconductor devices: | ESD protected gate |
Gate charge: | 51nC |
Technology: | SiC |
Kind of transistor: | cascode |
Gate-source voltage: | ±25V |
Pulsed drain current: | 125A |
Case: | TO247-3 |
Drain-source voltage: | 650V |
Drain current: | 40A |
On-state resistance: | 42mΩ |
Type of transistor: | N-JFET/N-MOSFET |
Вес единицы: | 0.006 кг |
---|---|
Минимальный заказ: | 1 |
Доступно: 20 22.90 € -+ |