Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A63.36€/ gab.Цена в том числе НДС 21%
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Manufacturer: | IXYS |
Power dissipation: | 570W |
Case: | SMPD |
Mounting: | SMD |
Technology: | GigaMOS™ |
Technology: | HiPerFET™ |
Technology: | Trench™ |
Reverse recovery time: | 200ns |
Drain-source voltage: | 300V |
Drain current: | 102A |
On-state resistance: | 20mΩ |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 367nC |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Pulsed drain current: | 440A |
Вес единицы: | 0.008 кг |
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Минимальный заказ: | 1 |