   | Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W42.87€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | IXYS |
| Case: | SMPD |
| Mounting: | SMD |
| Technology: | GigaMOS™ |
| Technology: | TrenchT2™ |
| Reverse recovery time: | 100ns |
| Drain-source voltage: | 40V |
| Drain current: | 600A |
| On-state resistance: | 1.3mΩ |
| Type of transistor: | N-MOSFET |
| Power dissipation: | 830W |
| Polarisation: | unipolar |
| Gate charge: | 590nC |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±20V |
| Pulsed drain current: | 2kA |
Параметры
| Вес единицы: | 0.008 кг |
|---|---|
| Минимальный заказ: | 1 |
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