   | Transistor: N-MOSFET; SuperMESH3™; unipolar; 600V; 0.76A; 27W; IPAK1.06€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | STMicroelectronics |
| Case: | IPAK |
| Mounting: | THT |
| Features of semiconductor devices: | ESD protected gate |
| Kind of package: | tube |
| Power dissipation: | 27W |
| Drain-source voltage: | 600V |
| Drain current: | 0.76A |
| On-state resistance: | 8Ω |
| Type of transistor: | N-MOSFET |
| Polarisation: | unipolar |
| Technology: | SuperMESH3™ |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±30V |
Параметры
| Минимальный заказ: | 1 |
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