 | Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W0.43€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | NEXPERIA |
| Power dissipation: | 1.2W |
| Case: | SOT23 |
| Case: | TO236AB |
| Mounting: | SMD |
| Kind of package: | reel |
| Kind of package: | tape |
| Features of semiconductor devices: | ESD protected gate |
| Technology: | Trench |
| On-state resistance: | 2Ω |
| Type of transistor: | N-MOSFET |
| Polarisation: | unipolar |
| Gate charge: | 0.6nC |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±20V |
| Pulsed drain current: | 1.2A |
| Drain-source voltage: | 60V |
| Drain current: | 0.245A |
Parametri
| Minimālais pasūtījums: | 1 |
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