   | Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W11.69€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | IXYS |
| Case: | TO3P |
| Kind of package: | tube |
| Technology: | Trench™ |
| Reverse recovery time: | 150ns |
| Features of semiconductor devices: | thrench gate power mosfet |
| Mounting: | THT |
| Drain current: | 75A |
| On-state resistance: | 16mΩ |
| Type of transistor: | N-MOSFET |
| Power dissipation: | 830W |
| Polarisation: | unipolar |
| Gate charge: | 150nC |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±20V |
| Pulsed drain current: | 320A |
| Drain-source voltage: | 200V |
Параметры
| Вес единицы: | 0.005 кг |
|---|---|
| Минимальный заказ: | 1 |
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