 | Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT230.68€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | INFINEON TECHNOLOGIES |
| Technology: | HEXFET® |
| Case: | SOT23 |
| Mounting: | SMD |
| On-state resistance: | 80mΩ |
| Power dissipation: | 0.8W |
| Features of semiconductor devices: | logic level |
| Gate charge: | 2.9nC |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±12V |
| Type of transistor: | N-MOSFET |
| Pulsed drain current: | 17A |
| Drain current: | 2.7A |
| Drain-source voltage: | 30V |
| Polarisation: | unipolar |
Параметры
| Минимальный заказ: | 1 |
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