Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN60.29€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | TOSHIBA |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Drain-source voltage: | 30V |
Drain current: | 9A |
Pulsed drain current: | 18A |
Power dissipation: | 1.25W |
Case: | uDFN6 |
Gate-source voltage: | ±20V |
On-state resistance: | 26mΩ |
Mounting: | SMD |
Gate charge: | 4.8nC |
Kind of package: | reel |
Kind of package: | tape |
Kind of channel: | enhanced |
Features of semiconductor devices: | ESD protected gate |
Minimālais pasūtījums: | 5 |
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Ir pieejams: 9 808.02 € -+ | Ir pieejams: 2 169.83 € -+ | Ir pieejams: 1 69.65 € -+ |