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Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB

1.94/ gab.Cena
ieskaitot PVN 21%
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Manufacturer:INFINEON TECHNOLOGIES
Case:TO220AB
Mounting:THT
Kind of package:tube
Technology:HEXFET®
Gate charge:90nC
Kind of channel:enhanced
Gate-source voltage:±20V
Trade name:StrongIRFET
Drain-source voltage:40V
Drain current:208A
On-state resistance:2.5mΩ
Type of transistor:N-MOSFET
Power dissipation:208W
Polarisation:unipolar
(EN)
Parametri
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