Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO2474.83€/ gab.Цена в том числе НДС 21%
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Manufacturer: | STMicroelectronics |
Drain-source voltage: | 800V |
Drain current: | 6.6A |
On-state resistance: | 0.65Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 190W |
Polarisation: | unipolar |
Kind of package: | tube |
Features of semiconductor devices: | ESD protected gate |
Technology: | SuperMesh™ |
Kind of channel: | enhanced |
Gate-source voltage: | ±30V |
Mounting: | THT |
Case: | TO247 |
Вес единицы: | 0.004 кг |
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Минимальный заказ: | 1 |