 | Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.24A; Idm: 1.2A0.31€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | NEXPERIA |
| Mounting: | SMD |
| Case: | SOT666 |
| Drain-source voltage: | 60V |
| Drain current: | 0.24A |
| On-state resistance: | 2Ω |
| Type of transistor: | N-MOSFET x2 |
| Power dissipation: | 0.525W |
| Polarisation: | unipolar |
| Kind of package: | reel |
| Kind of package: | tape |
| Features of semiconductor devices: | ESD protected gate |
| Gate charge: | 0.6nC |
| Technology: | Trench |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±20V |
| Pulsed drain current: | 1.2A |
Параметры
| Минимальный заказ: | 5 |
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