 | Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A0.28€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | NEXPERIA |
| Polarisation: | unipolar |
| Kind of package: | reel |
| Kind of package: | tape |
| Features of semiconductor devices: | ESD protected gate |
| Gate charge: | 1.9nC |
| Technology: | Trench |
| Kind of channel: | enhanced |
| Pulsed drain current: | -2.8A |
| Mounting: | SMD |
| Case: | DFN1006-3 |
| Case: | SOT883 |
| Drain-source voltage: | -20V |
| Drain current: | -0.7A |
| On-state resistance: | 645mΩ |
| Type of transistor: | P-MOSFET |
Параметры
| Минимальный заказ: | 5 |
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