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Lapas: «187188189190191192 .. 193»
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Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4VO615A40001.16-+
Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; LSOP4VOL618A-2T30001.16-+
Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247ACIRFP048RPBF4903.54-+
Diode: Zener; 0.5W; 27V; SMD; reel,tape; MicroMELF; single diodeBZM55B27-TR120000.60-+
Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 27W; TO220FPIRFI510GPBF9981.25-+
Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±1%; -55÷155°CCRCW040210K0FKED472000.03-+
Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; LSOP4VOL628A-3T28801.55-+
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400ASIRA90DP-T1-GE329901.94-+
Bridge rectifier: single-phase; Urmax: 1.2kV; If: 35A; Ifsm: 475AVS-GBPC3512W1007.09-+
Bridge rectifier: single-phase; Urmax: 1.2kV; If: 35A; Ifsm: 475AVS-GBPC3512A947.01-+
Potentiometer: shaft; single turn; 10kΩ; 1W; ±10%; linear; solderedP16NP103KAB154018.09-+
Diode: Schottky rectifying; SMD; 40V; 1.5A; SMAVS-15MQ040HM3/5AT75001.07-+
Resistor: wire-wound; THT; 560Ω; 3W; ±5%; Ø4.8x13mm; -50÷250°CAC03-560R-5%13151.31-+
Resistor: wire-wound; THT; 2.2kΩ; 3W; ±5%; Ø4.8x13mm; -50÷250°CAC03-2K2-5%2220.66-+
Resistor: wire-wound; THT; 220Ω; 5W; ±5%; Ø7.5x18mm; -50÷250°CAC05-220R-5%8830.78-+
Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°TSOP3443821451.55-+
Resistor: wire-wound; THT; 1.5kΩ; 5W; ±5%; Ø7.5x18mm; -50÷250°CAC05-1K5-5%1271.21-+
Resistor: wire-wound; THT; 1Ω; 3W; ±5%; Ø4.8x13mm; -50÷250°C; axialAC03-1R0-5%4461.31-+
IR transmitter; 0805; 850nm; 60°; SMD; Dim: 2x1.25x0.8mm; 100mAVSMY5850X0118861.45-+
IR transmitter; Gull wing; 940nm; transparent; 55mW; 10°; SMDVSMY2940G59901.45-+
IR transmitter; 940nm; transparent; 35mW; 75°; SMD; Dim: 3x2x1mmVSMB109403250.34-+
Diode: Schottky switching; SMD; 40V; 10ns; MELF quadro,SOD80LS103A-GS085350.29-+
Capacitor: electrolytic; SMD; 100uF; 25VDC; 8x8x10mm; ±20%; 3000hMAL215376101E35002.96-+
IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4SIP32431DNP3-T1GE415591.06-+
Resistor: wire-wound; THT; 100Ω; 4W; ±5%; Ø5.5x16.5mm; -50÷250°CAC04-100R-5%3400.79-+
IR transmitter; 860nm; transparent; 1425mW; 28°; SMD; 1000mAVSMA10852503204.34-+
Diode: Schottky rectifying; SMD; 60V; 1A; DO213AB; reel,tapeSGL41-60-E3/967450.55-+
Capacitor: polypropylene; 100nF; THT; ±20%; 15mm; 630VDC; 310VACBFC23392710411001.72-+
Lapas: «187188189190191192 .. 193»
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