WEEN SEMICONDUCTORS

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Transistor: NPN; bipolar; 400V; 12A; 80W; TO220ABPHE13009.1279841.37-+
Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2usBT149D.11243490.27-+
Triac; 600V; 8A; DPAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-ComBTA208S-600B.11826391.36-+
Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-ComBTA440Z-800BTQ454.77-+
Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2usBT169G.11238400.14-+
Triac; 800V; 0.8A; SOT223; Igt: 5mA; Ifsm: 9A; 3Q,Hi-ComBTA2008W-800D.13530590.45-+
Transistor: NPN; bipolar; 400V; 4A; 75W; TO220ABPHE13005.1278211.36-+
Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-ComBTA312-600CT.1275851.49-+
Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4QBT137-600G.1279881.36-+
Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 4Q; sensitive gateBT131-600E.41234490.42-+
Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220ABBYQ28E-200E.1274131.35-+
Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tapeEC103D1WX2690.46-+
Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50nsBYT79X-600.1277551.47-+
Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 2mA; DPAK; SMD; reel,tapeBT151S-650R.11825681.16-+
Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220ACBYC15-600.1274381.36-+
Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220ABBYV42E-150.1274961.74-+
Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gateBT137S-800E.11819361.37-+
Triac; 800V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gateBT131-800.11661620.77-+
Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2usBT258-600R.1278271.48-+
Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gateBT136S-800.1186511.35-+
Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220ACBYC20D-600PQ8251.55-+
Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-ComBTA312B-800B.1187601.46-+
Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220ACBYC8-600.1276071.55-+
Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gateBT131-600D.41212520.77-+
Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tubeNXPSC04650Q252.18-+
Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220ABBYV32E-100.1272841.36-+
Thyristor; 400V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2usBT152-400R.1279681.43-+
Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ammo PackBT169G.12634560.27-+
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P-PK 9-18
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