Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B50.05€/ gab.Цена в том числе НДС 21%
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Manufacturer: | IXYS |
Gate-emitter voltage: | ±20V |
Collector current: | 21A |
Pulsed collector current: | 265A |
Power dissipation: | 313W |
Semiconductor structure: | single transistor |
Electrical mounting: | screw |
Mechanical mounting: | screw |
Max. off-state voltage: | 1.7kV |
Type of module: | IGBT |
Features of semiconductor devices: | high voltage |
Case: | SOT227B |
Technology: | BiMOSFET™ |
Вес единицы: | 0.036 кг |
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Минимальный заказ: | 1 |