   | Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B50.05€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | IXYS |
| Max. off-state voltage: | 1.7kV |
| Semiconductor structure: | single transistor |
| Gate-emitter voltage: | ±20V |
| Collector current: | 21A |
| Pulsed collector current: | 265A |
| Power dissipation: | 313W |
| Electrical mounting: | screw |
| Mechanical mounting: | screw |
| Type of module: | IGBT |
| Features of semiconductor devices: | high voltage |
| Technology: | BiMOSFET™ |
| Case: | SOT227B |
Параметры
| Вес единицы: | 0.036 кг |
|---|---|
| Минимальный заказ: | 1 |
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