 | Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW0.14€/ gab.Цена в том числе НДС 21%
|
Описание товара
| Manufacturer: | NEXPERIA |
| Type of transistor: | N-MOSFET |
| Technology: | Trench |
| Polarisation: | unipolar |
| Drain-source voltage: | 20V |
| Drain current: | 0.8A |
| Pulsed drain current: | 4A |
| Power dissipation: | 0.35W |
| Case: | DFN1006B-3 |
| Case: | SOT883B |
| Gate-source voltage: | ±8V |
| On-state resistance: | 1.19Ω |
| Mounting: | SMD |
| Gate charge: | 1.4nC |
| Kind of package: | reel |
| Kind of package: | tape |
| Kind of channel: | enhanced |
Параметры
| Минимальный заказ: | 10 |
|---|
Задать вопрос
Līdzīgas preces
Līdzīgas preces
АКЦИИ / ВЫГОДНЫЕ ПРЕДЛОЖЕНИЕ
VEIKALIEM.LV