Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW0.14€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | NEXPERIA |
Kind of package: | reel |
Kind of package: | tape |
On-state resistance: | 1.19Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 0.35W |
Polarisation: | unipolar |
Gate charge: | 1.4nC |
Technology: | Trench |
Kind of channel: | enhanced |
Gate-source voltage: | ±8V |
Pulsed drain current: | 4A |
Mounting: | SMD |
Case: | DFN1006B-3 |
Case: | SOT883B |
Drain-source voltage: | 20V |
Drain current: | 0.8A |
Minimālais pasūtījums: | 10 |
---|
Ir pieejams: 2 18.99 € -+ | Ir pieejams: 20 87.78 € -+ |