Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W1.55€/ gab.Цена в том числе НДС 21%
|
Manufacturer: | NEXPERIA |
Power dissipation: | 94.9W |
Mounting: | SMD |
Kind of package: | reel |
Kind of package: | tape |
Case: | LFPAK56 |
Case: | PowerSO8 |
Case: | SOT669 |
Features of semiconductor devices: | logic level |
Polarisation: | unipolar |
Gate charge: | 39.2nC |
Kind of channel: | enhanced |
Pulsed drain current: | 120A |
Drain-source voltage: | 100V |
Drain current: | 21.3A |
On-state resistance: | 103.5mΩ |
Type of transistor: | N-MOSFET |
Минимальный заказ: | 1 |
---|