 | Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W1.55€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | NEXPERIA |
| Drain-source voltage: | 100V |
| Drain current: | 21.3A |
| On-state resistance: | 103.5mΩ |
| Type of transistor: | N-MOSFET |
| Power dissipation: | 94.9W |
| Polarisation: | unipolar |
| Kind of package: | reel |
| Kind of package: | tape |
| Features of semiconductor devices: | logic level |
| Gate charge: | 39.2nC |
| Kind of channel: | enhanced |
| Pulsed drain current: | 120A |
| Mounting: | SMD |
| Case: | LFPAK56 |
| Case: | PowerSO8 |
| Case: | SOT669 |
Parametri
| Minimālais pasūtījums: | 1 |
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