 | Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A0.54€/ gab.Цена в том числе НДС 21%
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Описание товара
| Manufacturer: | YANGJIE TECHNOLOGY |
| Type of transistor: | P-MOSFET |
| Technology: | SPLIT GATE TRENCH |
| Polarisation: | unipolar |
| Drain-source voltage: | -100V |
| Drain current: | -9.5A |
| Pulsed drain current: | -45A |
| Power dissipation: | 17.2W |
| Case: | DFN3.3x3.3 EP |
| Gate-source voltage: | ±20V |
| On-state resistance: | 0.12Ω |
| Mounting: | SMD |
| Gate charge: | 3.98nC |
| Kind of package: | reel |
| Kind of package: | tape |
| Kind of channel: | enhanced |
Параметры
| Минимальный заказ: | 3 |
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