Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A0.54€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | YANGJIE TECHNOLOGY |
Mounting: | SMD |
Power dissipation: | 17.2W |
Polarisation: | unipolar |
Kind of package: | reel |
Kind of package: | tape |
Gate charge: | 3.98nC |
Technology: | SPLIT GATE TRENCH |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Pulsed drain current: | -45A |
Case: | DFN3.3x3.3 EP |
Drain-source voltage: | -100V |
Drain current: | -9.5A |
On-state resistance: | 0.12Ω |
Type of transistor: | P-MOSFET |
Minimālais pasūtījums: | 3 |
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