   | Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A73.47€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | IXYS |
| Semiconductor structure: | single transistor |
| Reverse recovery time: | 150ns |
| Drain-source voltage: | 150V |
| Drain current: | 310A |
| On-state resistance: | 4mΩ |
| Power dissipation: | 1.07kW |
| Polarisation: | unipolar |
| Electrical mounting: | screw |
| Mechanical mounting: | screw |
| Type of module: | MOSFET transistor |
| Gate charge: | 715nC |
| Technology: | GigaMOS™ |
| Technology: | HiPerFET™ |
| Technology: | TrenchT2™ |
| Kind of channel: | enhanced |
| Gate-source voltage: | ±30V |
| Pulsed drain current: | 900A |
| Case: | SOT227B |
Parametri
| Vienības svars: | 0.037 kg |
|---|---|
| Minimālais pasūtījums: | 1 |
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