Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-333.67€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | TO247-3 |
Mounting: | THT |
Kind of package: | tube |
Features of semiconductor devices: | high voltage |
Technology: | BiMOSFET™ |
Pulsed collector current: | 265A |
Turn-on time: | 33ns |
Turn-off time: | 308ns |
Type of transistor: | IGBT |
Power dissipation: | 357W |
Gate-emitter voltage: | ±20V |
Collector-emitter voltage: | 1.7kV |
Gate charge: | 188nC |
Collector current: | 21A |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |