Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO26833.94€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | TO268 |
Mounting: | SMD |
Collector-emitter voltage: | 1.7kV |
Gate-emitter voltage: | ±20V |
Collector current: | 24A |
Pulsed collector current: | 230A |
Turn-on time: | 190ns |
Turn-off time: | 1285ns |
Type of transistor: | IGBT |
Power dissipation: | 250W |
Kind of package: | tube |
Features of semiconductor devices: | high voltage |
Gate charge: | 0.14µC |
Technology: | BiMOSFET™ |
Vienības svars: | 0.004 kg |
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Minimālais pasūtījums: | 1 |