Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-326.42€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Mounting: | THT |
Collector-emitter voltage: | 1.2kV |
Gate-emitter voltage: | ±20V |
Collector current: | 33A |
Pulsed collector current: | 90A |
Turn-on time: | 26ns |
Turn-off time: | 197ns |
Type of transistor: | IGBT |
Power dissipation: | 417W |
Kind of package: | tube |
Gate charge: | 110nC |
Technology: | POWER MOS 7® |
Technology: | PT |
Case: | TO247-3 |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |