Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max41.43€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | MICROCHIP (MICROSEMI) |
Mounting: | THT |
Type of transistor: | IGBT |
Power dissipation: | 625W |
Kind of package: | tube |
Features of semiconductor devices: | integrated anti-parallel diode |
Gate charge: | 185nC |
Case: | T-Max |
Technology: | POWER MOS 7® |
Technology: | PT |
Collector-emitter voltage: | 1.2kV |
Gate-emitter voltage: | ±30V |
Collector current: | 54A |
Pulsed collector current: | 170A |
Turn-on time: | 47ns |
Turn-off time: | 230ns |
Vienības svars: | 0.006 kg |
---|---|
Minimālais pasūtījums: | 1 |
Ir pieejams: 186 5.90 € -+ |