Transistor: IGBT; PT; 900V; 21A; 250W; TO247-311.34€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Type of transistor: | IGBT |
Case: | TO247-3 |
Mounting: | THT |
Kind of package: | tube |
Power dissipation: | 250W |
Collector-emitter voltage: | 900V |
Collector current: | 21A |
Technology: | POWER MOS 7® |
Technology: | PT |
Features of semiconductor devices: | integrated anti-parallel diode |
Gate charge: | 60nC |
Gate-emitter voltage: | ±30V |
Pulsed collector current: | 60A |
Turn-on time: | 23ns |
Turn-off time: | 170ns |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |