 | Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-416.14€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | BASiC SEMICONDUCTOR |
| Type of transistor: | IGBT |
| Technology: | Field Stop |
| Technology: | SiC SBD |
| Technology: | Trench |
| Collector-emitter voltage: | 650V |
| Collector current: | 75A |
| Power dissipation: | 405W |
| Case: | TO247-4 |
| Gate-emitter voltage: | ±20V |
| Pulsed collector current: | 300A |
| Mounting: | THT |
| Gate charge: | 444nC |
| Kind of package: | tube |
| Turn-on time: | 84ns |
| Turn-off time: | 565ns |
| Features of semiconductor devices: | integrated anti-parallel diode |
Parametri
| Vienības svars: | 0.006 kg |
|---|---|
| Minimālais pasūtījums: | 1 |
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