 | Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A75.33€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | Qorvo (UnitedSiC) |
| Mounting: | THT |
| Case: | TO247-4 |
| On-state resistance: | 27mΩ |
| Type of transistor: | N-JFET/N-MOSFET |
| Power dissipation: | 441W |
| Polarisation: | unipolar |
| Features of semiconductor devices: | ESD protected gate |
| Features of semiconductor devices: | Kelvin terminal |
| Gate charge: | 43nC |
| Technology: | SiC |
| Kind of transistor: | cascode |
| Gate-source voltage: | ±25V |
| Pulsed drain current: | 230A |
| Drain-source voltage: | 650V |
| Drain current: | 62A |
Parametri
| Vienības svars: | 0.007 kg |
|---|---|
| Minimālais pasūtījums: | 1 |
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