Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO26424.21€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | TO264 |
Kind of package: | tube |
Drain-source voltage: | 100V |
Drain current: | 420A |
On-state resistance: | 2.6mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 1670W |
Polarisation: | unipolar |
Gate charge: | 670nC |
Technology: | GigaMOS™ |
Technology: | HiPerFET™ |
Technology: | Trench™ |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Mounting: | THT |
Reverse recovery time: | 140ns |
Vienības svars: | 0.009 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 11 364.26 € -+ |