Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W10.85€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | GeneSiC SEMICONDUCTOR |
Technology: | G3R™ |
Technology: | SiC |
Mounting: | THT |
Power dissipation: | 123W |
Case: | TO247-3 |
Kind of package: | tube |
Pulsed drain current: | 40A |
Drain-source voltage: | 1.2kV |
Drain current: | 16A |
On-state resistance: | 0.16Ω |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 28nC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...15V |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 2 57.58 € -+ |