Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W19.34€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | ONSEMI |
Mounting: | THT |
Case: | TO247-4 |
Kind of package: | tube |
Power dissipation: | 28W |
Polarisation: | unipolar |
Features of semiconductor devices: | Kelvin terminal |
Gate charge: | 56nC |
Technology: | SiC |
Kind of channel: | enhanced |
Gate-source voltage: | -15...25V |
Pulsed drain current: | 125A |
Drain-source voltage: | 1.2kV |
Drain current: | 21A |
On-state resistance: | 80mΩ |
Type of transistor: | N-MOSFET |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 5 35.90 € -+ |