Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 91A; 200W19.54€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Drain-source voltage: | 1.2kV |
Drain current: | 26A |
On-state resistance: | 0.1Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 200W |
Polarisation: | unipolar |
Gate charge: | 64nC |
Technology: | SiC |
Kind of channel: | enhanced |
Pulsed drain current: | 91A |
Mounting: | THT |
Case: | TO247-3 |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 19 18.90 € -+ |