Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W17.96€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | GeneSiC SEMICONDUCTOR |
Kind of package: | tube |
Drain-source voltage: | 1.2kV |
Drain current: | 29A |
On-state resistance: | 75mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 207W |
Polarisation: | unipolar |
Features of semiconductor devices: | Kelvin terminal |
Gate charge: | 54nC |
Technology: | G3R™ |
Technology: | SiC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...15V |
Pulsed drain current: | 80A |
Mounting: | THT |
Case: | TO247-4 |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 2 360.88 € -+ |