Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 105A; 323W41.02€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Technology: | SiC |
Mounting: | THT |
Features of semiconductor devices: | Kelvin terminal |
Case: | TO247-4 |
Power dissipation: | 323W |
Drain-source voltage: | 1.2kV |
Drain current: | 46A |
On-state resistance: | 50mΩ |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 137nC |
Kind of channel: | enhanced |
Pulsed drain current: | 105A |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |