Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W33.94€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | NEXPERIA |
Power dissipation: | 313W |
Case: | TO247-3 |
Mounting: | THT |
Kind of package: | tube |
Technology: | SiC |
On-state resistance: | 60mΩ |
Type of transistor: | N-MOSFET |
Gate charge: | 95nC |
Kind of channel: | enhanced |
Gate-source voltage: | -10...22V |
Pulsed drain current: | 160A |
Polarisation: | unipolar |
Drain-source voltage: | 1.2kV |
Drain current: | 46A |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 109 3.90 € -+ | Ir pieejams: 2 33.59 € -+ |