Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W24.53€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | SMC DIODE SOLUTIONS |
Kind of package: | tube |
Power dissipation: | 320.5W |
Polarisation: | unipolar |
Features of semiconductor devices: | Kelvin terminal |
Gate charge: | 118nC |
Technology: | SiC |
Gate-source voltage: | -5...20V |
Pulsed drain current: | 160A |
Kind of channel: | enhanced |
Mounting: | THT |
Case: | TO247-4 |
Drain-source voltage: | 1.2kV |
Drain current: | 55A |
On-state resistance: | 40mΩ |
Type of transistor: | N-MOSFET |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 398 19.11 € -+ | Ir pieejams: 1 7407.18 € -+ |